pnp silicon planar medium power high gain transistor issue 2 ? april 94 features * 70 volt v ceo * gain of 400 at i c =3 amps * very low saturation voltage applications * darlington replacement * flash gun convertors * battery powered circuits * motor drivers absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -75 v collector-emitter voltage v ceo -70 v emitter-base voltage v ebo -5 v peak pulse current i cm -4 a continuous collector current i c -2 a practical power dissipation* p totp 1.5 w power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -75 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -70 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-40v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.45 -0.5 -0.5 v v v i c =-500ma, i b =-5ma* i c =-1a, i b =-25ma* i c =-2a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.95 v i c =-1a, i b =-25ma* base-emitter turn-on voltage v be(on) -0.75 v ic=-1a, v ce =-2v* static forward current transfer h fe 300 250 200 800 i c =-10ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* e-line to92 compatible ZTX792A 3-282 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 22 pf v cb =-10v, f=1mhz switching times t on t off 35 750 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX792A -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-283
pnp silicon planar medium power high gain transistor issue 2 ? april 94 features * 70 volt v ceo * gain of 400 at i c =3 amps * very low saturation voltage applications * darlington replacement * flash gun convertors * battery powered circuits * motor drivers absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -75 v collector-emitter voltage v ceo -70 v emitter-base voltage v ebo -5 v peak pulse current i cm -4 a continuous collector current i c -2 a practical power dissipation* p totp 1.5 w power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -75 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -70 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-40v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.45 -0.5 -0.5 v v v i c =-500ma, i b =-5ma* i c =-1a, i b =-25ma* i c =-2a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.95 v i c =-1a, i b =-25ma* base-emitter turn-on voltage v be(on) -0.75 v ic=-1a, v ce =-2v* static forward current transfer h fe 300 250 200 800 i c =-10ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* e-line to92 compatible ZTX792A 3-282 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 22 pf v cb =-10v, f=1mhz switching times t on t off 35 750 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX792A -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-283
ZTX792A d.c. 1s 100ms 10ms 1.0ms 0.1ms i c /i b =10 i c /i b =40 i c /i b =20 i c /i b =100 v ce =2v i c /i b =40 v ce =2v 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( s at) - (v olts) v ce(sat) v i c i c - collector current (amps) v ce (sa t ) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - no r mal ised ga i n v be - (v olts) i c - colle c tor cur r e n t ( amps) 750 500 250 h f e - t yp i cal gain v ce - collector voltage (volts) safe operating area 0.1 100 1 10 0.01 0.1 1 10 single pulse test at t amb =25c t amb =25c -55c +25c +100c +175c 0 +100c +25c -55c 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v b e (sat) - ( v olts) -55c +25c +100c +175c 1.8 1.4 1.2 1.0 0.4 0.2 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 -55c +25c +100c 3-284
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